Research Papers in National/ International Journals:
|
1. |
Current-voltage characteristics of Pd2Si based Schottky diodes on p-type (111) silicon and evaluation of their barrier heights. Subhash Chand and Jitendra Kumar Solid State Electronics 38, (1995) 1103-1104. |
|
2. |
Current-voltage characteristics and barrier parameters of Pd2Si/p-Si(111) Schottky diodes in a wide temperature range. Subhash Chand and Jitendra Kumar Semiconductor Science & Technology 10, (1995) 1680-1688. |
|
3. |
Current-transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures. Subhash Chand and Jitendra Kumar Applied Physics A 63, (1996) 171-178. |
|
4. |
On the Existence of a barrier heights distribution in Pd2Si/Si Schottky diodes. Subhash Chand and Jitendra Kumar Journal of Applied Physics 80, (1996) 288-294 |
|
5. |
Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I-V-T measurements. Subhash Chand and Jitendra Kumar Semiconductor Science & Technology 11, (1996) 1203-1208 |
|
6. |
Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes. Subhash Chand and Jitendra Kumar Applied Physics A 65, (1997) 497-503 |
|
7. |
Simulation and analysis of current-voltage characteristics of Schottky diodes containing barrier inhomogeneities. Subhash Chand and Jitendra Kumar Semiconductor Science & Technology 12, (1997) 899-906 |
|
8. |
Effects of barrier height distribution on the behavior of a Schottky diode. Subhash Chand and Jitendra Kumar Journal of Applied Physics 82, (1997) 5005-10 |
|
9. |
Origin of non-linear current-voltage characteristics of metal-semiconductor contacts: A numerical study Subhash Chand Indian Journal of Engineering and Materials Sciences 7, (2000) 268-273 |
|
10. |
An accurate approach for analyzing inhomogeneous Schottky diodes with a Gaussian distribution of barrier heights. Subhash Chand Semiconductor Science & Technology 17, (2002) L36-L40 |
|
11. |
On intersecting behaviour of current-voltage characteristics of inhomogeneous Schottky diodes at low temperatures. Subhash Chand Semiconductor Science & Technology 19, (2004) 82-86 |
|
12. |
Analysis of current-voltage characteristics of inhomogeneous Schottky diodes at low temperatures. Subhash Chand and Saroj Bala Applied Surface Science 252 (2005) 358-363 |
|
13. |
A comparative study of numerical and analytical approaches of simulating inhomogeneous Schottky diodes characteristics Subhash Chand and Saroj Bala Semiconductor Science & Technology 20, (2005) 1143-1148 |
|
14. |
Theoretical evidence for random variation of series resistance of elementary diodes in inhomogeneous Schottky contacts Subhash Chand Physica B 373 (2006) 284-290. |
|
15. |
Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes Subhash Chand and Saroj Bala Physica B 390, (2007) 179-184. |
|
16. |
Synthesis and Electrical Characterization of Self-Supported Conducting Polypyrrole-Poly(vinylidene fluoride) Composite Films Manish Taunk, Atul Kapil and Subhash Chand The Open Macromolecules Journal, 2 (2008) 74-79. |
|
17. |
Preparation and characterization of chemically synthesized poly(N-methylaniline) Atul Kapil, Manish Taunk and Subhash Chand Synthetic Metals 159, (2009) 1267. IF=2.109 |
|
18. |
Low Temperature Charge Transport Study in p-Toluenesulfonic Acid Doped Polyaniline Atul Kapil, Manish Taunk and Subhash Chand Asian Journal of Chemistry Vol. 21, No. 10 (2009), S138-142 IF= 0.27 |
|
19. |
Preparation and charge transport studies of chemically synthesized polyaniline Atul Kapil, Manish Taunk and Subhash Chand J Mater Sci: Mater. Electron. 21, 399-404 (2010). IF= 1.486 ISSN: 0957-4522 (print version) ISSN: 1573-482X (electronic version) |
|
20. |
Hopping and tunneling transport over a wide temperature range in chemically synthesized doped and undoped polypyrrole Manish Taunk, Atul Kapil, Subhash Chand Solid State Communication 150 (2010) 1766-1769 IF= 1.941 |
|
21. |
Chemical synthesis and low temperature electrical transport in polypyrrole doped with sodium bis(2-ethylhexyl) sulfosuccinate. Manish Taunk, Atul Kapil and Subhash Chand J Mater Sci: Mater. Electron. 22 (2011)p136–142 IF= 1.486 |
|
22. |
Study of Synthesis and Temperature Dependence of DC Conductivity in the Low Temperature Range for Poly(N-Methylaniline)Journal of Electronic Materials 40 (2011) 1364-1368 IF=1.635 |
|
23. |
Effect of inverse doped surface layer in Schottky barrier modification: A numerical study Subhash Chand, Priyanka Kaushal and Jozef Osvald Journal of Electronic Materials, 41 (12) 3387-92. IF=1.635 Print ISSN 0361-5235 Online ISSN 1543-186X |
|
24. |
Current voltage characteristics of Schottky diode simulated using semiconductor device equations Priyanka Kaushal, Subhash Chand and Jozef Osvald International Journal of Electronics, 100 (2013) 686-96. IF=0.509 ISSN 0020-7217 (Print), 1362-3060 (Online) |
|
25. |
Numerical simulation study of Schottky diode characteristics with inverse doped surface layer Subhash Chanda, Priyanka Kaushala and Jozef Osvald Materials Science in Semiconductor Processing, 16 (13) 454-60. IF=1.338 ISSN: 1369-8001 |
|
26. |
Bias and temperature dependent charge transport in flexible polypyrrole devices Journal of Applied Physics 115, 074507 (2014) Manish Taunk, Subhash Chand ISSN: 0021-8979, E-ISSN: 1089-7550 |
|
27. |
Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique Journal of Alloys and Compounds 613 (2014) 395–400 Subhash Chand and Rajender Kumar ISSN: 0925-8388 |
|
28. |
Growth and temperature dependent characterization of pulsed laser deposited Ag/n-ZnO/p-Si/Al heterojunction. J Mater Sci: Mater Electron 25 (2014) 4531–4537 Rajender Kumar and Subhash Chand ISSN: 0957-4522 (print version) ISSN: 1573-482X (electronic version) |
|
29. |
Oxygen vacancy induced dielectric relaxation studies in Bi42xLaxTi3O12 (x 5 0.0, 0.3, 0.7, 1.0) ceramics Sumit Bhardwaj, Joginder Paul, Subhash Chand, K. K. Raina and Ravi Kumar J Mater Sci: Mater Electron 25 (2014) 4568–4576 Impact Factor1.798 ISSN: 0957-4522 (print version) ISSN: 1573-482X (electronic version) |
|
30. |
Structural, optical and electrical characterization of Al/n-ZnO/p-Si/Al heterostructures. Rajender Kumar and Subhash Chand Journal of Electronic Materials 44 (2015) 194-201. Print ISSN 0361-5235 Online ISSN 1543-186X |
|
31. |
Chemical synthesis and charge transport mechanism in solution processed flexible polypyrrole films Manish Taunk and SubhashChand Materials Science in Semiconductor Processing, 39 (2015) 659-664 ISSN: 1369-8001 Impact Factor: 1.955 5-Year Impact Factor: 1.806 |
|
32. |
Tailoring the structural and optical properties of ZnO by doping with Cd N. Rana, Subhash Chand andArvind K.Gathania Ceramics International 41(2015)12032–12037 Impact Factor: 2.605 5-Year Impact Factor: 2.540 ISSN: 0272-8842 |
|
33. |
Band gap engineering of ZnO by doping with Mg N Rana, Subhash Chand and Arvind K Gathania Physica. Scripta. 90 (2015) 085502 (6pp)
2014 Impact factor = 1.126 |
|
34. |
Structural, Electrical and Red Emission Properties of Pd/n-ZnO/p-Si/Al Heterostructures Rajender Kumar and Subhash Chand Electron. Mater. Lett. 11 (973-981) 2015 DOI: 10.1007/s13391-015-4348-y 2014 Impact factor = 1.980 ISSN: 1738-8090 (print version) ISSN: 2093-6788 (electronic version) |
|
35. |
Electroactive Phase Induced Bi4Ti3O12–Poly(Vinylidene Difluoride) Composites with Improved Dielectric Properties Sumit Bhardwaj, Joginder PauL, Subhash Chand, K.K. Raina, and Ravi Kumar Journal of Electronic Materials, 44, (3710-3723) 2015 DOI: 10.1007/s11664-015-3848-8 Impact Factor1.491 Print ISSN 0361-5235 Online ISSN 1543-186X |
|
36. |
Numerical analysis of inhomogeneous Schottky diode with discrete barrier height patches Priyank Kaushal and Subhash Chand International Journal of Electronics 103, (937-949) 2016 DOI: 10.1080/00207217.2015.1082201 2014 Impact factor = 0.459 Impact Factor: 0.414 ©2016 ISSN 0020-7217 (Print), 1362-3060 (Online) |
|
37. |
Journal of Materials Science: Materials in Electronics Synthesis and characterization of flower-like ZnO structures and their applications in photocatalytic degradation of Rhodamine B dye. N. Rana, Subhash Chand and Arvind K. Gathania J Mater Sci: Mater Electron (2016) 27:2504–2510 DOI 10.1007/s10854-015-4051-7 Impact Factor1.798 ISSN 0957-4522 |
|
38. |
Green synthesis of zinc oxide nano-sized spherical particles using Terminalia chebula fruits extract for their photocatalytic applications N. Rana, Subhash Chand, and Arvind K. Gathania Int Nano Lett 6 (91–98)2016 DOI 10.1007/s40089-015-0171-6 ISSN Print : 2008-9295, e-ISSN : 2228-5326 |
|
39. |
Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature Rajender Kumar, Subhash Chand Solid State Sciences 58 (2016) 115-121 10.1016/j.solidstatesciences.2016.06.003 Impact Factor: 2.041 5-Year Impact Factor: 1.916 ISSN 1293-2558 |