|
1. On the barrier heights distribution in Pd2Si/Si Schottky diodes. Subhash Chand and Jitendra Kumar In Semiconductor Devices edited by Krishan Lal, Narosa, New Delhi (1996) p.196-198.
2. On the formation of a homogeneous barrier at the palladium Silicon-silicide interface. Subhash Chand and Jitendra Kumar. In Semiconductor Devices edited by V. Kumar and S. K. Agarwal, Narosa, New Delhi (1998) p. 614-616.
3.
Morphology and electrical behaviour of Pd2Si/
p-Si junctions. 2000, Smolenice Castle, Slovakia, Eds. J. Osvald, S. Hascik, J.Kuzmik, J.Breza, pp. 261-263.
4. Effect of series resistance on the current-voltage characteristics of inhomogeneous Schottky diodes. Subhash Chand Proc. Fifth Int. Euro Conf. on Advanced Semiconductor Devices and Microsystems ASDAM 2004, October 17-21, 2004, Smolenice Castle, Slovakia, p. 251-4.
5. A computational study of current-voltage characteristics of inhomogeneous Schottky diodes over wide temperature range. Saroj Bala and Subhash ChandNational conference on Advances in Condensed Matter Physics, School of Physics and Materials Science, TIET Patiala. February 11-12, 2005
6. On occurrence of random variation in series resistance of elementary diodes in inhomogeneous Schottky contacts. Subhash Chand,
7. Chemical synthesis and electronic transport properties of doped polypyrrole. Manish Taunk, and Subhash Chand Homi Bhabha Centenary BRNS-GND University Workshop on Molecular/Organic Electronic Devices (MOED- 2009) September 22-25, 2009 Organized by Department of Physics Guru Nanak Dev University, Amritsar
8. Morphology and temperature dependant electrical conductivity of chemically synthesized polypyrrole. Manish Taunk, Amit Verma and Subhash Chand International Conference on Advances in Electron Microscopy and Related Techniques & XXXI Annual Meeting of EMSI March 8-10, 2010. Organized by Bhabha Atomic Research Centre, Mumbai, INDIA.
Center, New Delhi, December 17-20, 2009.
10. Synthesis and electronic transport properties of polypyrrole doped with sodium bis(2-ethylhexyl) sulfosuccinate. International workshop on physics of semiconductor devices, “IWPSD-09” Held at Jamia Millia Islamia, New Delhi, December 15-19, 2009.
10. Electronic Transport Properties In Chemically Synthesized and Doped Polypyrrole At Low Temperature. International Conference on Recent Trends in Materials and Characterization National Institute Of Technology Karnataka, Surathkal, India, February 14-15, 2010.
11. Synthesis and electrical characterization of chemically prepared poly(N- methylaniline). Atul Kapil, Rajneesh Sharma and Subhash Chand Polymer Science and Engineering: Emerging Dimensions, University Institute of Chemical Technology and Engineering, PU Chandigarh, November 26-27, 2010.
12. Chemical Synthesis and Study of Electrical Conductivity Over Wide Temperature Range in Doped and Un-doped
Polypyrrole. National conference On Advances in Polymer Science and Technology (APST-2010) October 22-24, 2010
13. Temperature dependence of dc conductivity in camphorsulfonic acid doped poly(N-methylaniline) Atul Kapil, Rajneesh Sharma and Subhash Chand International Conference on Advances in Condensed and Nano Materials, Physics Department, PU Chandigarh, February 23-26, 2011.
14. Low Temperature Charge Transport Study in Polypyrrole Manish Taunk and Subhash Chand International conference on advances in condensed & nano materials (ICACNM-2011) February 23-26, 2011.
15. Effect of inverse doped surface layer on the current-voltage characteristics of Schottky diode- A Numerical study Subhash Chand, Priyanka Kaushal International Workshop on Physics of Semiconductor Devices (IWPSD-11), IIT Kanpur. December 19-22, 2011.
16. Silver-Polypyrrole-Silver structure fabrication and characterization over wide temperature range Manish Taunk and Subhash Chand International Workshop on Physics of Semiconductor Devices (IWPSD-11), IIT Kanpur. December 19-22, 2011.
17. A numerical simulation study of inverse doped surface layer in Schottky barrier modification Subhash Chand and Priyanka Kaushal Materials Research Society Spring Meeting 2012, San Francisco, California USA April 9-13, 2012.
18. Numerical simulation study of barrier inhomogeneities at Schoktty contacts Subhash Chand and Priyanka Kaushal Advanced Semiconductor Devices and Microsystems, ASDAM 2013, November 11-15, 2012, Smolenice Castle, Slovakia
19. Doping concentration dependence of pinch-off effect in inhomogeneous Schottky diodes. Subhash Chand and Priyanka Kaushal International Workshop on Physics of Semiconductor Devices (IWPSD-11), Amity University Noida, December 10- 13, 2013.
20. Optical and electrical characteristics of Al/n-ZnO/p-Si/Al hetero junctions Subhash Chand. Symposium on Integration of Functional Oxides with Semiconductors in Materials Research Society Fall Meeting 2015, held at Hynes Convention Center, Boston USA, during Nov. 29 - Dec. 4, 2015
|